An ultralow power constant reference current circuit with low temperature dependence for micropower electronic applications is proposed in this paper. This circuit consists of a constant-current subcircuit and a bias-voltage subcircuits, and it compensates for the temperature characteristics of mobility µ, thermal voltage VT, and threshold voltage VTH in such a way that the reference current has small temperature dependence. A SPICE simulation demonstrated that reference current and total power dissipation is 97.7 nA, 1.1 µW, respectively, and the variation in the reference current can be kept very small within 4% in a temperature range from -20 to 100.

A voltage-controlled oscillator (VCO) tolerant to process variations at lower supply voltage was proposed. The circuit consists of an on-chip threshold-voltage-monitoring circuit, a current-source circuit, a body- biasing control circuit, and the delay cells of the VCO. Because variations in low-voltage VCO frequency are mainly determined by that of the current in delay cells, a current-compensation technique was adopted by using an on-chip threshold-voltage-monitoring circuit and body-biasing circuit techniques. Monte Carlo SPICE simulations demonstrated that variations in the oscillation frequency by using the proposed techniques were able to be suppressed about 65% at a 1-V supply voltage, compared to frequencies with and without the techniques.

A very-high-speed ten-neuron analog neural network LSI chip is fabricated for the first time using super self-aligned Si bipolar process technology. The LSI consists of ten neurons and 100 electrically modifiable synaptic weights. The neural network nonlinear mapping function to solve the four-bit parity problem is successfully demonstrated at 150 mega-patterns/sec. The operation speed of this neural network is, to the best of the authors, knowledge, the fastest yet reported.